JMSH0805PG
80V 3.4m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
80
3.0
129
3.4
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC Sub-systems
Motor Driving in Power Tool, E-bike
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
8
7
6
G
4
5
Ordering Information
Device
TJ (°C)
-55 to 150
Package
PDFN5x6-8L
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0805PG-13
8
SH0805P
1
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
80
±20
VGS
V
TC = 25°C
129
Continuous Drain
Current (1)
ID
A
TC = 100°C
82
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
516
A
EAS
338
mJ
TC = 25°C
125
Power Dissipation (4)
PD
W
T
C = 100°C
50
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
ID = 20A
VDS = 40V
ID = 20A
16
12
8
6
4
4
2
0
0
0
5
10
15
20
0
15
30
45
60
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 2.0
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