80V, 162A, 3mΩ N-channel Power SGT MOSFET
JMSH0803MC
Product Summary
Features
Excellent RDS(ON) and Low Gate Charge
Parameters
VDSS
Value
80
Unit
V
100% UIS TESTED
100% ΔVds TESTED
Halogen-free; RoHS-compliant
Pb-free plating
VGS(th)_Typ
3.0
V
ID(@VGS=10V)
RDS(ON)_Typ(@VGS=10V
162
3.0
A
mW
Applications
Load Switch
PWM Application
Power Management
D
S
G
TO-220C-3L Top View
Schematic Diagram
Pin Assignment
Ordering Information
Per Carton
Device
Package
Marking
MSL
Form
Tube(pcs)
(pcs)
JMSH0803MC
TO-220-3L
SH0803M
N/A
Tube
50
5000
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter
Value
Symbol
Unit
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
80
±20
V
V
TC = 25°C
162
ID
Continuous Drain Current
Pulsed Drain Current (1)
A
TC = 100°C
115
IDM
Refer to Fig.4
900
A
Single Pulsed Avalanche Energy (2)
TC = 25°C
TC = 100°C
Junction & Storage Temperature Range
EAS
mJ
179
PD
Power Dissipation
W
72
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient(3)
Max
40
Symbol
Unit
RθJA
°C/W
RθJC
Thermal Resistance, Junction to Case
0.70
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