Datasheet > JMSH1001ATL

JMSH1001ATL

更新时间： 2023-12-06 20:11:14

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	325K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMSH1001ATL 数据手册

JMSH1001ATL

100V 1.3m TOLL N-Ch Power MOSFET

Product Summary

Features

Parameter

V_DS

Value

100

2.8

Unit

•

Ultra-low R_DS(ON)

Low Gate Charge

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% R_gTested

Pb-free Lead Plating

411

1.3

R_{DS(ON)_Typ}(@ V_GS= 10V)

m

Halogen-free and RoHS-compliant

Applications

•

Power Managerment in Telecom., Industrial Automation, CE

Current/Voltage Switching in DC/DC & AC/DC Sub-systems

Motor Driving or BMS in Power Tool, E-vehicle, Robotics

PowerJE^®10x12 Top View

PowerJE^®10x12 Bottom

Drain

Tab

Gate

Pin 1

Source

Pins 2‐8

Pin 1

Ordering Information

Device

T_J(°C)

Package

PowerJE^®10x12 ⁽¹⁾

# of Pins

Marking

SH1001A

MSL

Media

13-inch Reel

Quantity (pcs)

JMSH1001ATL-13

-55 to 175

2000

Note 1: PowerJE^®is a registered trademark of JieJie Micro., its package outline is compatible to that of TO-LeadLess (TOLL).

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

100

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±20

T_C= 25°C

411

Continuous Drain

Current ⁽²⁾

I_D

T_C= 100°C

290

Pulsed Drain Current ⁽³⁾

Avalanche Current ⁽⁴⁾

Avalanche Energy ⁽⁴⁾

I_DM

I_AS

1343

E_AS

1250

500

T_C= 25°C

Power Dissipation ⁽⁵⁾

P_D

T_C= 100°C

250

Junction & Storage Temperature Range

T_J, T_STG

-55 to 175

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 50V

_D= 20A

I_D= 20A

120

160

200

V_GS(V)

Q_g(nC)

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 2.3

Page 1 of 5

12 3 4 5

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