JMSH1002CC
JMSH1002CE
100V 2.4m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
Ultra-low RDS(ON)
100
2.8
219
2.4
Low Gate Charge
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
High Current Capability
A
RDS(ON)_Typ (@ VGS = 10V)
m
100% UIS Tested, 100% Rg Tested
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Motor Driving in Power Tool, E-vehicle, Robotics
TO-220-3L Top View
TO-263-3L Top View
D
D
S
G
G
G
D
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH1002C
SH1002C
MSL
N/A
1
Media
Tube
Quantity (pcs)
JMSH1002CC-U
JMSH1002CE-13
3
3
-55 to 150
-55 to 150
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
100
±20
219
139
VGS
V
TC = 25°C
C = 100°C
Continuous Drain
Current (1)
ID
A
A
T
Continuous Drain
Current (6)
TC = 25°C
ID
180
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
878
61
A
A
EAS
558
mJ
TC = 25°C
250
Power Dissipation (4)
PD
W
TC = 100°C
100
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
10
8
ID = 20A
VDS = 50V
D = 20A
8
6
4
2
0
I
6
4
2
0
0
25
50
75
100
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
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