JMSH0804NC
JMSH0804NE
85V 3.2m N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
85
3.0
160
3.2
VGS(th)_Typ
V
D (@ VGS = 10V) (1)
A
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Power Management in Telecom., Industrial Automation, CE
TO-220-3L Top View
TO-263-3L Top View
D
S
D
G
G
G
D
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH0804N
SH0804N
MSL
NA
1
Media
Quantity (pcs)
JMSH0804NC-U
JMSH0804NE-13
3
3
-55 to 150
-55 to 150
Tube
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
85
±20
VGS
V
TC = 25°C
160
Continuous Drain
Current (1)
ID
A
TC = 100°C
100
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
519
A
EAS
434
mJ
TC = 25°C
192
Power Dissipation (4)
PD
W
T
C = 100°C
76
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
20
10
8
ID = 20A
VDS = 40V
ID = 20A
15
10
5
6
4
2
0
0
0
5
10
15
20
0
20
40
60
80
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 3.1
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