Datasheet > JMSH0803ME

JMSH0803ME

更新时间： 2024-09-14 17:01:27

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
7页	1275K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JMSH0803ME 数据手册

80V, 206A, 2.7mΩ N-channel Power SGT MOSFET

JMSH0803ME

Product Summary

Features



Excellent R_DS(ON)and Low Gate Charge

Parameters

V_DSS

Value

Unit

100% UIS TESTED

100% ΔVds TESTED

Halogen-free; RoHS-compliant

Pb-free plating

V_{GS(th)_Typ}

3.0

I_D(@V_GS=10V)

R_{DS(ON)_Typ}(@V_GS=10V

206

2.7

Applications



Load Switch

PWM Application

Power Management

TO-263-3L Top View

Schematic Diagram

Pin Assignment

Ordering Information

Per Carton

Device

Package

Marking

MSL

Form

Reel(pcs)

(pcs)

JMSH0803ME

TO-263-3L

JMSH0803ME

Tape&Reel

800

4000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Unit

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

±20

T_C= 25°C

206

I_D

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

T_C= 100°C

146

I_DM

Refer to Fig.4

900

Single Pulsed Avalanche Energy ⁽²⁾

T_C= 25°C

T_C= 100°C

Junction & Storage Temperature Range

E_AS

268

P_D

Power Dissipation

107

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient⁽³⁾

Max

Symbol

Unit

R_θJA

°C/W

R_θJC

Thermal Resistance, Junction to Case

0.47

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REV 1.0 | 1/7

12 3 4 5 6 7

中文翻译

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