Datasheet > JMSH0601BGQ

JMSH0601BGQ

更新时间： 2023-12-06 19:43:45

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	412K
描述
汽车 MOSFET

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中文翻译

获取价格

数据手册

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JMSH0601BGQ 数据手册

JMSH0601BGQ

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

V_(BR)DSSI_D= 250A, V_GS= 0V

V_DS= 48V, V_GS= 0V

I_DSS

1.0

5.0

Zero Gate Voltage Drain Current

A

T_J

= 55°C

V_DS= 0V, V_GS= ±20V

V_GS(th)V_DS= V_GS, I_D= 250A

_GS= 10V, I_D= 20A

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

±100

3.4

2.2

2.8

1.0

Static Drain-Source ON-Resistance

Forward Transconductance

Diode Forward Voltage

R_DS(ON)

g_FS

1.3

m

V_DS= 5V, I_D= 20A

I_S= 1A, V_GS= 0V

T_C= 25°C

110

0.65

V_SD

I_S

1.0

Diode Continuous Current

214

DYNAMIC PARAMETERS ⁽⁵⁾

Input Capacitance

C_iss

C_oss

C_rss

R_g

7219

1841



V_GS= 0V, V_DS= 30V, f = 1MHz

V_GS= 0V, V_DS= 0V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

3.3

SWITCHING PARAMETERS ⁽⁵⁾

Total Gate Charge (@ V_GS= 10V)

Q_g

Q_gs

Q_gd

t_D(on)

t_r

102

Total Gate Charge (@ V_GS= 6.0V)

Gate Source Charge

V_GS= 0 to 10V

V_DS= 30V, I_D= 20A

Gate Drain Charge

15.6

Turn-On DelayTime

Turn-On Rise Time

V_GS= 10V, V_DS= 30V

R_L= 1.5, R_GEN= 6

Turn-Off DelayTime

t_D(off)

t_f

131

111

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_rr

I_F= 20A, dI_F/dt = 100A



Q_rr

/

Thermal Performance

Parameter

Typ.

Max.

Symbol

R_JA

Unit

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

0.70

0.85

R_JC

Notes:

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical

application board design.

2. This single-pulse measurement was taken under T_{J_Max}= 175°C.

3. E_ASof 1014 mJ is based on starting T_J= 25°C,L = 3.0mH, I_AS= 26A, V_GS= 10V, V_DD= 30V; 100% test at L = 0.6mH, I_AS= 45A.

4. The power dissipation P_Dis based on T_{J_Max}= 175°C.

5. This value is guaranteed by design hence it is not included in the production test.

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.1

Page 2 of 6

123 4 5 6

中文翻译

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