JMSH0602AC
JMSH0602AE
60V 1.8m N-Ch Power MOSFET
Features
Product Summary
•
•
•
•
•
Ultra-low RDS(ON)
Parameter
Value
Unit
V
Low Gate Charge
VDS
60
3.0
195
1.8
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
VGS(th)_Typ
D (@ VGS = 10V) (1)
RDS(ON)_Typ (@ VGS = 10V)
V
I
A
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, e-Fuse Switching, Motor Driving
TO-220-3L Top View
TO-263-3L Top View
D
D
G
G
G
D
S
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH0602A
SH0602A
MSL
N/A
1
Media
Quantity (pcs)
JMSH0602AC-U
JMSH0602AE-13
3
3
-55 to 150
Tube
50
-55 to 150 13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
60
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS
±20
V
TC = 25°C
195
Continuous Drain
Current (1)
ID
A
TC = 100°C
123
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
552
A
A
50
EAS
375
mJ
TC = 25°C
156
Power Dissipation (4)
PD
W
TC = 100°C
63
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
5
VDS = 30V
D = 20A
ID = 20A
I
4
3
2
1
0
6
4
2
0
0
20
40
60
80
0
5
10
15
20
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
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