JMSH0606AG
60V 3.7mΩ N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
60
2.9
98
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
3.7
mΩ
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
2
3
8
7
6
G
4
5
Ordering Information
Device
TJ (°C)
Package
PDFN5x6-8L
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0606AG-13
8
SH0606A
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
98
Continuous Drain
Current (1)
ID
A
TC = 100°C
62
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
257
A
EAS
216
mJ
TC = 25°C
83
Power Dissipation (4)
PD
W
TC = 100°C
33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
10
8
ID = 20A
VDS = 30V
D = 20A
I
6
6
4
4
2
2
0
0
5
10
15
20
0
10
20
30
40
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.0
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