JMSH0605AGD
60V 4.7mΩ N-Ch Power MOSFET
Features
Product Summary
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
Parameter
VDS
Value
60
Unit
V
VGS(th)_Typ
ID (@ VGS = 10V) (1)
2.8
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
54
A
RDS(ON)_Typ (@ VGS = 10V)
4.7
mΩ
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN5x6-8L-D
Pin Configuration
Chip-1 & Chip-2
D1
Top View
Bottom View
Top View
D2
S2
G1
G2
S1
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0605AGD-13
PDFN5x6-8L-D
8
H0605AD
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
54
Continuous Drain
Current (1)
ID
A
TC = 100°C
34
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
215
A
EAS
216
mJ
TC = 25°C
31
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
12.5
-55 to 150
TJ, TSTG
°C
RDS(ON) vs. VGS
Gate Charge
10
8
10
8
ID = 20A
VDS = 30V
D = 20A
I
6
6
4
4
2
2
0
0
5
10
15
20
0
10
20
30
40
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.0
Page 1 of 6