JMSH0602AK
60V 2.2mΩ N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Typ.
Unit
V
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
60
3.0
195
2.2
VGS(th)
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON) (@ VGS = 10V)
mΩ
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
TO-252-3L Top View
D
S
D
G
G
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0602AK-13
TO-252-3L
3
SH0602A
1
-55 to 150 13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
195
Continuous Drain
Current (1)
ID
A
TC = 100°C
123
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
700
A
EAS
600
mJ
TC = 25°C
178
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
71
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
5
4
3
2
1
10
8
ID = 20A
VDS = 30V
D = 20A
I
6
4
2
0
0
5
10
15
20
0
15
30
45
60
75
90
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
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Rev. 1.0
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