JMSH0602AEQ
60V 2.0mΩ N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
60
Unit
V
•
•
•
•
•
•
Ultra-low RDS(ON)
Low Gate Charge
VGS(th)_Typ
ID (@ VGS = 10V) (1)
2.8
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
224
2.0
A
RDS(ON)_Typ (@ VGS = 10V)
mΩ
Halogen-free and RoHS-compliant
AEC-Q101 Qualified for Automotive Applications
TO-263-3L Top View
D
D
G
G
S
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSH0602AEQ-13
TO-263-3L
8
SH0602AQ
1
-55 to 175 13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
224
Continuous Drain
Current (1)
ID
A
TC = 100°C
158
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
832
A
EAS
338
mJ
TC = 25°C
230
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
115
TJ, TSTG
-55 to 175
°C
RDS(ON) vs. VGS
Gate Charge
10
8
3.5
3.0
2.5
2.0
1.5
1.0
VDS = 30V
ID = 20A
ID = 20A
6
4
2
0
0
20
40
60
80
100
0
5
10
15
20
VGS (V)
Qg (nC)
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.0
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