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JANTXVR2N7394U PDF预览

JANTXVR2N7394U

更新时间: 2023-09-03 20:33:24
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英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1178K
描述
Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL

JANTXVR2N7394U 数据手册

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IRHN7054 (JANSR2N7394U)  
Radiation Hardened Power MOSFET Surface Mount (SMD-1)  
Device Characteristics  
2.2  
Source-Drain Diode Ratings and Characteristics (Pre-Irradiation)  
Table 4  
Source-Drain Diode Characteristics  
Symbol Parameter  
Min. Typ. Max. Unit Test Conditions  
IS  
Continuous Source Current (Body Diode)  
Pulsed Source Current (Body Diode) 1  
35  
140  
1.4  
280  
2.2  
A
A
ISM  
VSD  
trr  
2
Diode Forward Voltage  
V
TJ = 25°C, IS = 35A, VGS = 0V  
Reverse Recovery Time  
ns  
µC  
TJ = 25°C, IF = 35A, VDD ≤ 50V  
2
di/dt = 100A/µs  
Qrr  
ton  
Reverse Recovery Charge  
Forward Turn-On Time  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2.3  
Thermal Characteristics  
Table 5  
Symbol  
RJC  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min. Typ. Max.  
Unit  
°C/W  
0.83  
Junction-to-PC Board (soldered to 1inch square cu clad board)  
6.6  
R-PCB  
2.4  
Radiation Characteristics  
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness  
assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for  
total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are  
tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.  
2.4.1  
Electrical Characteristics — Post Total Dose Irradiation  
Table 6  
Electrical Characteristics @ TJ = 25°C, Post Total Dose Irradiation 3, 4  
Up to 500krad (Si)5  
Symbol  
Parameter  
Unit  
Test Conditions  
Min.  
60  
2.0  
Max.  
BVDSS  
VGS(th)  
IGSS  
Drain-to-Source Breakdown Voltage  
Gate Threshold Voltage  
V
V
VGS = 0V, ID = 1.0mA  
VDS = VGS, ID = 1.0mA  
VGS = 20V  
4.0  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Zero Gate Voltage Drain Current  
100  
-100  
25  
nA  
VGS = -20V  
IDSS  
µA  
VDS = 48V, VGS = 0V  
VGS = 12V, ID2 = 30A  
RDS(on)  
Static Drain-to-Source  
27  
m  
On-State Resistance (TO-3) 2  
RDS(on)  
VSD  
Static Drain-to-Source  
VGS = 12V, ID2 = 30A  
VGS = 0V, IF = 35A  
27  
m  
On-State Resistance (SMD-1) 2  
Diode Forward Voltage  
1.4  
V
1 Repetitive Rating; Pulse width limited by maximum junction temperature.  
2 Pulse width 300 µs; Duty Cycle 2%  
3 Total Dose Irradiation with VGS Bias. VGS = 12V applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.  
4 Total Dose Irradiation with VDS Bias. VDS = 48V applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.  
5 Part numbers IRHN7054 (JANSR2N7394U), IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U)  
5 of 13  
2022-05-25  
 
 
 
 
 
 
 
 
 

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