Datasheet > JANTXVR2N7394U

JANTXVR2N7394U

更新时间： 2023-09-03 20:33:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1178K
描述
Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL

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JANTXVR2N7394U 数据手册

IRHN7054 (JANSR2N7394U)

Radiation Hardened Power MOSFET Surface Mount (SMD-1)

Device Characteristics

2.2

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation)

Table 4

Source-Drain Diode Characteristics

Symbol Parameter

Min. Typ. Max. Unit Test Conditions

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) ¹

—

140

1.4

280

2.2

I_SM

V_SD

t_rr

Diode Forward Voltage

T_J= 25°C, I_S= 35A, V_GS= 0V

Reverse Recovery Time

µC

T_J= 25°C, I_F= 35A, V_DD≤ 50V

di/dt = 100A/µs

Q_rr

t_on

Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

2.3

Thermal Characteristics

Table 5

Symbol

R_JC

Thermal Resistance

Parameter

Junction-to-Case

Min. Typ. Max.

Unit

^°C/W

—

0.83

—

Junction-to-PC Board (soldered to 1inch square cu clad board)

6.6

R_-PCB

2.4

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness

assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for

total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are

tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

2.4.1

Electrical Characteristics — Post Total Dose Irradiation

Table 6

Electrical Characteristics @ T_J= 25°C, Post Total Dose Irradiation ^{3, 4}

Up to 500krad (Si)⁵

Symbol

Parameter

Unit

Test Conditions

Min.

2.0

—

Max.

—

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

4.0

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

100

-100

—

V_GS= -20V

I_DSS

—

µA

V_DS= 48V, V_GS= 0V

V_GS= 12V, I_D2= 30A

R_DS(on)

Static Drain-to-Source

—

m

On-State Resistance (TO-3) ²

R_DS(on)

V_SD

Static Drain-to-Source

V_GS= 12V, I_D2= 30A

V_GS= 0V, I_F= 35A

—

m

On-State Resistance (SMD-1) ²

Diode Forward Voltage

1.4

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²Pulse width  300 µs; Duty Cycle  2%

³Total Dose Irradiation with V_GSBias. V_GS= 12V applied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

⁴Total Dose Irradiation with V_DSBias. V_DS= 48V applied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

⁵Part numbers IRHN7054 (JANSR2N7394U), IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U)

5 of 13

2022-05-25

1 2 3 456 7 8...13

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与JANTXVR2N7394U相关器件

型号	品牌	获取价格	描述	数据表
JANTXVR2N7422U	INFINEON	获取价格	Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(S
JANTXVR2N7424U	INFINEON	获取价格	Rad hard, -60V, -48A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si
JANTXVR2N7426	INFINEON	获取价格	Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
JANTXVR2N7426U	INFINEON	获取价格	Rad hard, -200V, -29A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(S
JANTXVR2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7464T2	INFINEON	获取价格	Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 k
JANTXVR2N7472U2	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7473U2	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANTXVR2N7474U2	INFINEON	获取价格	Rad hard, 250V, 31A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad

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