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JANTXVR2N7482T3

更新时间： 2024-02-04 08:07:48
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
22页 203K
描述
Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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JANTXVR2N7482T3 技术参数

生命周期：Active零件包装代码：TO-257AA
包装说明：FLANGE MOUNT, R-XSFM-P3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.38
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：117 mJ
外壳连接：ISOLATED配置：SINGLE
最小漏源击穿电压：30 V最大漏极电流 (ID)：18 A
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：R-XSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：72 A认证状态：Qualified
参考标准：MIL-19500/702表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

JANTXVR2N7482T3 数据手册

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INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 21 August 2010.  
MIL-PRF-19500/702C  
21 May 2010  
SUPERSEDING  
MIL-PRF-19500/702B  
30 May 2007  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED  
(TOTAL DOSE AND SINGLE EVENT EFFECTS)  
TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3,  
JANTXVR, F, G, AND H AND JANSR, F, G, AND H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-Channel, enhancement-mode,  
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating  
(EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.  
1.2 Physical dimensions. See figure 1, (TO-257AA, T3).  
1.3 Maximum ratings. TA = +25°C, unless otherwise specified.  
Type  
PT (1)  
TC =  
+25°C  
PT  
TA =  
+25°C  
VDS  
VDG  
VGS  
ID1 (3) (4) ID2 (3) (4)  
IS  
IDM (5)  
A (pk)  
TJ  
and  
TSTG  
R θJC (2)  
TC =  
+100°C  
TC = +25°C  
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc  
°C/W  
°C  
2N7482T3  
2N7483T3  
2N7484T3  
75  
75  
75  
1.56  
1.56  
1.56  
30  
60  
30  
60  
±20  
±20  
±20  
18  
18  
18  
18  
18  
14  
18  
18  
18  
72  
72  
72  
1.67  
1.67  
1.67  
-55  
to  
+150  
100  
100  
(1) Derate linearly 0.6 W/°C for TC > +25°C.  
(2) See figure 2, thermal impedance curves.  
(3) The following formula derives the maximum theoretical ID specs. ID is limited to 18A by package  
and device construction.  
-
TJM TC  
( on ) at  
TJM  
=
ID  
(
)
x
(
)
RθJC  
RDS  
(4) See figure 3, maximum drain current graph.  
(5) IDM = 4 X ID1, as defined in note (3).  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.  
AMSC N/A  
FSC 5961  
1234567...22

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JANTXVRH3154-1 MICROSEMI Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,

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