Datasheet > JANTXVR2N7484T3

JANTXVR2N7484T3

更新时间： 2024-09-24 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1565K
描述
Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXVR2N7484T3 数据手册

IRHY57130CM (JANSR2N7484T3)

PD-93826G

Radiation Hardened Power MOSFET

Thru-Hole (TO-257AA)

100V, 18A, N-channel, R5 Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: 100V

I_D: 18A

R_DS(on),max: 70m

Q_G,max: 50nC

REF: MIL-PRF-19500/702

Low R_DS(on)

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

ESD rating: Class 1C per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives

TO-257AA

Thermal management

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHY57130CM

Ordering options

Package

Screening Level

COTS

TID Level

TO-257AA

100 krad(Si)

300 krad(Si)

500 krad(Si)

JANSR2N7484T3

IRHY53130CM

TO-257AA

JANS

COTS

JANSF2N7484T3

IRHY54130CM

JANS

COTS

JANSG2N7484T3

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2022-05-26

12 3 4 5 6 7...13

中文翻译

下载PDF

与JANTXVR2N7484T3相关器件

型号	品牌	获取价格	描述	数据表
JANTXVR2N7493T2	INFINEON	获取价格	Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100
JANTXVR2N7494U5	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANTXVRH3154	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3154-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3154A	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3154A-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3155	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3155-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3155A	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3155A-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,

与JANTXVR2N7484T3相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

69

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXVR2N7484T3

JANTXVR2N7484T3 数据手册

与JANTXVR2N7484T3相关器件

与JANTXVR2N7484T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXVR2N7484T3

JANTXVR2N7484T3 数据手册

与JANTXVR2N7484T3相关器件

与JANTXVR2N7484T3相关文章

您还可以找

您在本页遇到什么问题？