Datasheet > JANTXVR2N7482T3

JANTXVR2N7482T3

更新时间： 2024-01-30 04:44:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
22页	203K
描述
Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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JANTXVR2N7482T3 技术参数

生命周期：	Active	零件包装代码：	TO-257AA
包装说明：	FLANGE MOUNT, R-XSFM-P3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.38
其他特性：	RADIATION HARDENED	雪崩能效等级（Eas）：	117 mJ
外壳连接：	ISOLATED	配置：	SINGLE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	18 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-257AA
JESD-30 代码：	R-XSFM-P3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	72 A	认证状态：	Qualified
参考标准：	MIL-19500/702	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

JANTXVR2N7482T3 数据手册

MIL-PRF-19500/702C

1.4 Primary electrical characteristics at T_C= +25°C.

Type

Min V_(BR)DSS

V_GS= 0

V_GS(TH)1

V_DS≥ V_GS

Max I_DSS1

V_GS= 0

V_DS= 80 percent of

rated V_DS

Max r_DS(on)

V_GS= 12V, I_D= I_D2

(1)

E_AS

I_D= 1.0 mA dc

I_D= 1.0mA dc

T_J= +25°C T_J= +150°C

V dc

µA dc

Ω

Min

2.0

Max

4.0

2N7482T3

2N7483T3

2N7484T3

177

110

0.030

0.040

0.070

0.060

0.080

0.160

2.0

4.0

100

(1) Pulsed (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 Test Methods for Semiconductor Devices.

Semiconductor Devices, General Specification for.

* (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or

https://assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

123 4 5 6 7...22

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与JANTXVR2N7482T3相关器件

型号	品牌	描述	获取价格	数据表
JANTXVR2N7484T3	INFINEON	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr	获取价格
JANTXVR2N7493T2	INFINEON	Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100	获取价格
JANTXVR2N7494U5	INFINEON	Power Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S	获取价格
JANTXVRH3154	MICROSEMI	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,	获取价格
JANTXVRH3154-1	MICROSEMI	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,	获取价格
JANTXVRH3154A	MICROSEMI	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,	获取价格

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