Datasheet > JANTXVR2N7464T2

JANTXVR2N7464T2

更新时间： 2023-12-06 20:13:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	513K
描述
Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL

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JANTXVR2N7464T2 数据手册

PD-91863F

IRHF7430SE

JANSR2N7464T2

500V, N-CHANNEL

REF: MIL-PRF-19500/675

RADIATION HARDENED

POWER MOSFET

THRU-HOLE TO-205AF (TO-39)

RAD Hard™HEXFET ^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHF7430SE

100 kRads(Si)

2.5A

JANSR2N7464T2

1.77

TO-39

Description

Features

IR HiRel RADHard™ HEXFET^®MOSFET technology

provides high performance power MOSFETs for space

applications. This technology has long history of proven

performance and reliability in satellite applications. These

devices have been characterized for both Total Dose and

Single Event Effects (SEE). The combination of low RDS(on)

and low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor control.

These devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

 Low Total Gate Charge

 Neuton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

2.5

1.6

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.2

± 20

154

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

2.5

8.0

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2018-10-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANTXVR2N7464T2相关器件

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JANTXVR2N7472U2	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7473U2	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANTXVR2N7474U2	INFINEON	获取价格	Rad hard, 250V, 31A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANTXVR2N7482T3	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANTXVR2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANTXVR2N7493T2	INFINEON	获取价格	Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100
JANTXVR2N7494U5	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANTXVRH3154	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTXVRH3154-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,

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