Datasheet > JANTXVR2N7422U

JANTXVR2N7422U

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	370K
描述
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL

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JANTXVR2N7422U 数据手册

PD-90885H

IRHN9150

JANSR2N7422U

100V, P-CHANNEL

REF: MIL-PRF-19500/662

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-1)

RAD Hard™HEXFET ^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHN9150

100 kRads(Si)

300 kRads(Si)

-22A

JANSR2N7422U

JANSF2N7422U

0.080

IRHN93150

SMD - 1

Description

Features

IR HiRel RADHard™ HEXFET^®MOSFET technology provides

high performance power MOSFETs for space applications.

This technology has long history of proven performance and

reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects

(SEE). The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as DC

to DC converters and motor control. These devices retain all of

the well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Proton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

 Ceramic Package

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-22

-14

-88

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

150

1.2

V_GS

E_AS

Gate-to-Source Voltage

± 20

500

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

-22

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

-23

T_J

Operating Junction and

Storage Temperature Range

Package Mounting Surface Temp.

Weight

-55 to + 150

T_STG

°C

300 ( for 5s)

2.6 (Typical)

For Footnotes, refer to the page 2.

2018-12-11

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANTXVR2N7422U相关器件

型号	品牌	获取价格	描述	数据表
JANTXVR2N7424U	INFINEON	获取价格	Rad hard, -60V, -48A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si
JANTXVR2N7426	INFINEON	获取价格	Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100
JANTXVR2N7426U	INFINEON	获取价格	Rad hard, -200V, -29A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(S
JANTXVR2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7464T2	INFINEON	获取价格	Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 k
JANTXVR2N7472U2	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7473U2	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANTXVR2N7474U2	INFINEON	获取价格	Rad hard, 250V, 31A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANTXVR2N7482T3	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S

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