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JANTXVR2N7473U2 PDF预览

JANTXVR2N7473U2

更新时间: 2024-11-21 14:56:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 757K
描述
Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL

JANTXVR2N7473U2 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:SURFACE MOUNT PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
Is Samacsys:N其他特性:RADIATION HARDENED
雪崩能效等级(Eas):380 mJ外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):53.5 A最大漏极电流 (ID):53.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):214 A
认证状态:Qualified参考标准:MIL-19500/684A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

JANTXVR2N7473U2 数据手册

 浏览型号JANTXVR2N7473U2的Datasheet PDF文件第2页浏览型号JANTXVR2N7473U2的Datasheet PDF文件第3页浏览型号JANTXVR2N7473U2的Datasheet PDF文件第4页浏览型号JANTXVR2N7473U2的Datasheet PDF文件第5页浏览型号JANTXVR2N7473U2的Datasheet PDF文件第6页浏览型号JANTXVR2N7473U2的Datasheet PDF文件第7页 
IRHNS57260SE (JANSR2N7473U2A)  
PD-97948C  
Radiation Hardened Power MOSFET  
Surface Mount (SupIR- SMD)  
200V, 53.5A, N-channel, R5 Technology  
Product Summary  
Features  
Single event effect (SEE) hardened  
BVDSS: 200V  
ID : 53.5A  
RDS(on),max : 38m  
QG,max : 155nC  
REF: MIL-PRF-19500/684  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Ceramic Package  
Light weight  
Surface Mount  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
SupIR- SMD  
Thermal management  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have  
been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).  
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC  
to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such  
as voltage control, fast switching and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHNS57260SE  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
SupIR-SMD  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
JANSR2N7473U2A  
IRHNS53260SE  
SupIR-SMD  
SupIR-SMD  
SupIR-SMD  
JANS  
COTS  
JANSF2N7473U2A  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2023-01-04  
 
 
 
 
 

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