Datasheet > JANTXVR2N7426U

JANTXVR2N7426U

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	969K
描述
Rad hard, -200V, -29A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

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JANTXVR2N7426U 数据手册

PD-93969B

IRHNA9260

JANSR2N7426U

200V, P-CHANNEL

REF: MIL-PRF-19500/655

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA9260

IRHNA93260

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

I_D

QPL Part Number

-29A

JANSR2N7426U

JANSF2N7426U

0.154

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

 Ceramic Package

 Light Weight

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has over a decade of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC-DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D1@ V_GS= -12V, T_C= 25°C

Continuous Drain Current

-29

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-18

-116

300

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

2.4

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy 

Avalanche Current 

500

-29

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-20

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

3.3 (Typical)

For Footnotes refer to the page 2.

2020-01-16

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANTXVR2N7426U相关器件

型号	品牌	获取价格	描述	数据表
JANTXVR2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7464T2	INFINEON	获取价格	Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 k
JANTXVR2N7472U2	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7473U2	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANTXVR2N7474U2	INFINEON	获取价格	Rad hard, 250V, 31A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANTXVR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANTXVR2N7482T3	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S
JANTXVR2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANTXVR2N7493T2	INFINEON	获取价格	Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100
JANTXVR2N7494U5	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide S

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