Datasheet > JANTXVR2N7380

JANTXVR2N7380

更新时间： 2023-12-06 20:12:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	605K
描述
Rad hard, 100V, 14.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL

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JANTXVR2N7380 数据手册

IRHY7130CM (JANSR2N7380)

Radiation Hardened Power MOSFET Thru-Hole (TO-257AA)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Symbol

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

100

—

V_GS= 0V, I_D= 1.0mA

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

R_DS(on)

0.11

V/°C Reference to 25°C, I_D= 1.0mA

—

2.0

2.5

—

180

200

4.0

—

V_GS= 12V, I_D2= 9.1A ¹

m

Static Drain-to-Source On-State

Resistance

V_GS= 12V, I_D1= 14.4A ¹

V_GS(th)

Gfs

Gate Threshold Voltage

V_DS= V_GS, I_D= 1mA

V_DS= 15V, I_D2= 9.1A ¹

V_DS= 80V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 125°C

V_GS= 20V

Forward Transconductance

I_DSS

I_GSS

Zero Gate Voltage Drain Current

A

250

100

-100

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

V_GS= -20V

Q_G

I_D1= 14.4A

V_DS= 50V

V_GS= 12V

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

I_D1= 14.4A **

V_DD= 50V

R_G= 7.5

V_GS= 12V

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Measured from Drain lead

(6mm / 0.25 in from package)

to Source lead (6mm/ 0.25

in from package) with Source

wire internally bonded from

Source pin to Drain pad

L_s+L_D

Total Inductance

—

7.0

—

C_iss

C_oss

C_rss

Input Capacitance

—

960

340

—

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

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