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JANTXVR2N7390 PDF预览

JANTXVR2N7390

更新时间: 2024-11-21 14:56:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 2241K
描述
Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL

JANTXVR2N7390 数据手册

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PD-91312F  
IRHF9230  
JANSR2N7390  
200V, P-CHANNEL  
REF: MIL-PRF-19500/630  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE TO-205AF (TO-39)  
RAD HardHEXFET ® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHF9230  
100 kRads(Si)  
300 kRads(Si)  
-4.0A  
-4.0A  
JANSR2N7390  
JANSF2N7390  
0.80  
0.80  
IRHF93230  
Description  
Features  
IR HiRel RADHard™ HEXFET® MOSFET technology  
provides high performance power MOSFETs for space  
applications. This technology has long history of proven  
performance and reliability in satellite applications. These  
devices have been characterized for both Total Dose and  
Single Event Effects (SEE). The combination of low RDS(on)  
and low gate charge reduces the power losses in switching  
applications such as DC to DC converters and motor control.  
These devices retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Hermetically Sealed  
Light Weight  
ESD Rating: Class 1B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current  
-4.0  
A
-2.4  
-16  
25  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
0.2  
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
171  
Single Pulse Avalanche Energy   
mJ  
A
IAR  
EAR  
Avalanche Current   
-4.0  
2.5  
-27  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
dv/dt  
TJ  
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
Weight  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
0.98 (Typical)  
For Footnotes, refer to the page 2.  
1
2018-12-10  
International Rectifier HiRel Products, Inc.  

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