PD-90881E
IRHE9130
JANSR2N7389U
100V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
REF: MIL-PRF-19500/630
RAD Hard™HEXFET ® TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHE9130
100 kRads(Si)
300 kRads(Si)
-6.5A
-6.5A
JANSR2N7389U
JANSF2N7389U
0.30
0.30
IRHE93130
LCC-18
Description
Features
IR HiRel RADHard™ HEXFET® technology provides high
performance power MOSFETs for space applications. This
technology has over a decade of proven performance and
reliability in satellite applications. These devices have been
characterized for both Total Dose and Single Event Effects
(SEE). The combination of low Rdson and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such as
voltage control, fast switching and temperature stability of
electrical parameters.
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
-6.5
A
-4.1
-26
25
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
0.2
±20
165
-6.5
2.5
-22
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Package Mounting Surface Temp.
Weight
°C
g
300 (for 5s)
0.42 (Typical)
For Footnotes, refer to the page 2.
1
2019-12-10
International Rectifier HiRel Products, Inc.