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JANTXVR2N7389U PDF预览

JANTXVR2N7389U

更新时间: 2023-12-06 20:12:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 989K
描述
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC, 100 krad(Si) TID, QPL

JANTXVR2N7389U 数据手册

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PD-90881E  
IRHE9130  
JANSR2N7389U  
100V, P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (LCC-18)  
REF: MIL-PRF-19500/630  
RAD HardHEXFET ® TECHNOLOGY  
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHE9130  
100 kRads(Si)  
300 kRads(Si)  
-6.5A  
-6.5A  
JANSR2N7389U  
JANSF2N7389U  
0.30  
0.30  
IRHE93130  
LCC-18  
Description  
Features  
IR HiRel RADHardHEXFET® technology provides high  
performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and  
reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects  
(SEE). The combination of low Rdson and low gate charge  
reduces the power losses in switching applications such as  
DC to DC converters and motor control. These devices retain  
all of the well established advantages of MOSFETs such as  
voltage control, fast switching and temperature stability of  
electrical parameters.  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
ESD Rating: Class 1B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current  
-6.5  
A
-4.1  
-26  
25  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
Maximum Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
0.2  
±20  
165  
-6.5  
2.5  
-22  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
EAR  
dv/dt  
TJ  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Package Mounting Surface Temp.  
Weight  
°C  
g
300 (for 5s)  
0.42 (Typical)  
For Footnotes, refer to the page 2.  
1
2019-12-10  
International Rectifier HiRel Products, Inc.  

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