Datasheet > JANTXVH2N7270

JANTXVH2N7270

更新时间： 2024-11-05 00:00:03

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25页	120K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 11A I(D) \| TO-254AA

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JANTXVH2N7270 数据手册

The documentation and process conversion

measures necessary to comply with this

INCH-POUND

revision shall be completed by 15 February 1998

MIL-PRF-19500/603C

15 November 1997

SUPERSEDING

MIL-PRF-19500/603B

3 May 1996

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

(TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON

TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U

JANTXVR, F, G, AND H; AND JANSR, F, G, AND H

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation

hardened (total dose only), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with

avalanche energy maximum rating (E ) and maximum avalanche current (I ).

AS AS

1.2 Physical dimensions. See figure 1, TO-254AA and figure 2 (surface mount).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

ISO

70,000 ft

altitude

and

= +25°C

= +100°C

STG

V dc

A dc

A(pk)

°C

V dc

2N7394

2N7268

2N7269

2B6270

150

100

200

500

100

200

500

±20

35.0

34.0

26.0

11.0

30.0

21.0

16.0

7.0

35.0

34.0

26.0

11.0

200

136

104

-55

N/A

500

+150

1/ Derate linearly 1.2 W/°C for T > +25°C;

max -

T_J

T_C

T_J

2 /

I _D

(

)x(

r_DSon

max )

R_θ

3/ I may be limited by pin diameter.

4/ I

+ 4 X I ; as calculated by footnote 2/.

5/ Electrical characteristics, ratings and conditions for “U” suffix devices (surface mount) are identical to the corresponding

non-“U” suffix devices unless otherwise noted.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...25

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与JANTXVH2N7270相关器件

型号	品牌	获取价格	描述	数据表
JANTXVH2N7294	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 69A I(D) \| TO-254AA
JANTXVH2N7298	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 9A I(D) \| TO-254AA
JANTXVH2N7380	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-257AA
JANTXVH2N7381	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-257AA
JANTXVH2N7394	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 35A I(D) \| TO-254AA
JANTXVH2N7481U3	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANTXVHN3G01	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
JANTXVIN6626US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.55A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6627US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6628US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS,

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