Datasheet > JANTXVIN6627US

JANTXVIN6627US

更新时间： 2024-11-05 15:35:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
4页	264K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTXVIN6627US 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.92
其他特性：	HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	最大非重复峰值正向电流：	75 A
元件数量：	1	相数：	1
端子数量：	2	最大输出电流：	1.55 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大重复峰值反向电压：	400 V
最大反向恢复时间：	0.03 µs	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTXVIN6627US 数据手册

1N6626US thru 1N6631US

VOIDLESS-HERMETICALLY-SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/590 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “E”

or D-5B

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount series equivalent to the JEDEC registered

1N6626 to 1N6631 series

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

•

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

•

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/590

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6626US, MSP6629US, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Axial-leaded equivalents also available (see separate data

sheet for 1N6626 thru 1N6631)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +175^oC

Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 75A (except

1N6631 which is 60A)

Note: Test pulse = 8.3ms, half-sine wave.

Average Rectified Forward Current (I_O) at T_EC= +110^oC:

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous

inventory had solid Silver end caps with

Tin/Lead finish.

•

MARKING: Cathode band only

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 539 mg

1N6626US thru 1N6628US

1N6629US thru 1N6631US

4.0 A

2.8 A

(Derate linearly at 1.5%/^oC for T_EC> +110^oC)

Average Rectified Forward Current (I_O) at T_A=25^oC:

See package dimensions and recommended

pad layout on last page

1N6626US thru 1N6628US

1N6629US thru 1N6631US

1.55 A

1.15 A

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_Orating

is for PC boards where thermal resistance from mounting

point to ambient is sufficiently controlled where T_J(max)is

not exceeded. See latest issue of MIL-PRF-19500/590)

•

Thermal Resistance junction to endcap (R_θ_JEC): 10^oC/W

Capacitance at V_R= 10 V: 40 pF

Solder temperature: 260^oC for 10 s (maximum)

6-07-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与JANTXVIN6627US相关器件

型号	品牌	获取价格	描述	数据表
JANTXVIN6628US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6629US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.15A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6631US	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.15A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVLL3595A	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANTXVLL962AUR-1	MICROSEMI	获取价格	Zener Diode, 11V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL962BUR-1	MICROSEMI	获取价格	Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL962UR-1	MICROSEMI	获取价格	Zener Diode, 11V V(Z), 20%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL963AUR-1	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL963BUR-1	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL963UR-1	MICROSEMI	获取价格	Zener Diode, 12V V(Z), 20%, 0.5W, Silicon, Unidirectional, DO-213AA,

与JANTXVIN6627US相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXVIN6627US

JANTXVIN6627US 技术参数

JANTXVIN6627US 数据手册

与JANTXVIN6627US相关器件

与JANTXVIN6627US相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXVIN6627US

JANTXVIN6627US 技术参数

JANTXVIN6627US 数据手册

与JANTXVIN6627US相关器件

与JANTXVIN6627US相关文章

您还可以找

您在本页遇到什么问题？