5秒后页面跳转
捷配首页

Datasheet > JANTXVH2N7394
JANTXVH2N7394 PDF预览

JANTXVH2N7394

更新时间： 2024-09-23 00:00:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管脉冲局域网
页数 文件大小 规格书
25页 120K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA

阅读下载

中文翻译

获取价格

JANTXVH2N7394 数据手册

 浏览型号JANTXVH2N7394的Datasheet PDF文件第2页浏览型号JANTXVH2N7394的Datasheet PDF文件第3页浏览型号JANTXVH2N7394的Datasheet PDF文件第4页浏览型号JANTXVH2N7394的Datasheet PDF文件第5页浏览型号JANTXVH2N7394的Datasheet PDF文件第6页浏览型号JANTXVH2N7394的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this  
INCH-POUND  
revision shall be completed by 15 February 1998  
MIL-PRF-19500/603C  
15 November 1997  
SUPERSEDING  
MIL-PRF-19500/603B  
3 May 1996  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED  
(TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON  
TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U  
JANTXVR, F, G, AND H; AND JANSR, F, G, AND H  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation  
hardened (total dose only), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with  
avalanche energy maximum rating (E ) and maximum avalanche current (I ).  
AS AS  
1.2 Physical dimensions. See figure 1, TO-254AA and figure 2 (surface mount).  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
Type  
5/  
P
1/  
P
V
V
V
I
2/  
I
I
I
T
V
ISO  
70,000 ft  
altitude  
T
T
DS  
DG  
GS  
D1  
D2  
S
DM  
op  
and  
T
= +25°C  
3/  
T
= +100°C  
2/  
4/  
T
STG  
A
C
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc  
A(pk)  
°C  
V dc  
2N7394  
2N7268  
2N7269  
2B6270  
150  
150  
150  
150  
4
4
4
4
60  
100  
200  
500  
60  
100  
200  
500  
±20  
±20  
±20  
±20  
35.0  
34.0  
26.0  
11.0  
30.0  
21.0  
16.0  
7.0  
35.0  
34.0  
26.0  
11.0  
200  
136  
104  
44  
-55  
to  
N/A  
N/A  
N/A  
500  
+150  
1/ Derate linearly 1.2 W/°C for T > +25°C;  
C
max -  
TJ  
TC  
TJ  
2 /  
=
I D  
(
)x(  
at  
rDSon  
max )  
Rθ  
JC  
3/ I may be limited by pin diameter.  
D1  
4/ I  
DM  
+ 4 X I ; as calculated by footnote 2/.  
D1  
5/ Electrical characteristics, ratings and conditions for “U” suffix devices (surface mount) are identical to the corresponding  
non-“U” suffix devices unless otherwise noted.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...25

中文翻译

下载PDF

与JANTXVH2N7394相关器件

型号 品牌 获取价格 描述 数据表
JANTXVH2N7481U3 INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
JANTXVHN3G01 TOSHIBA

获取价格

 		TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
JANTXVIN6626US MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 1.55A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6627US MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6628US MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6629US MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 1.15A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVIN6631US MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 1.15A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS,
JANTXVLL3595A MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANTXVLL962AUR-1 MICROSEMI

获取价格

 		Zener Diode, 11V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXVLL962BUR-1 MICROSEMI

获取价格

 		Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA,

与JANTXVH2N7394相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证