是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-257AA | 包装说明: | FLANGE MOUNT, R-XSFM-P3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | 3A001.A.1.A | HTS代码: | 8541.29.00.95 |
风险等级: | 5.7 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 150 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 9.4 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-XSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 37 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/614C |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTXVH2N7394 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254AA |
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JANTXVH2N7481U3 | INFINEON | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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JANTXVHN3G01 | TOSHIBA | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal |
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JANTXVIN6626US | MICROSEMI | Rectifier Diode, 1 Phase, 1 Element, 1.55A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, |
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JANTXVIN6627US | MICROSEMI | Rectifier Diode, 1 Phase, 1 Element, 1.55A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, |
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JANTXVIN6628US | MICROSEMI | Rectifier Diode, 1 Phase, 1 Element, 1.55A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, |
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