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JANTXVH2N7381 PDF预览

JANTXVH2N7381

更新时间： 2024-01-16 04:31:34
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
18页 92K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA

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JANTXVH2N7381 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-257AA包装说明：FLANGE MOUNT, R-XSFM-P3
针数：3Reach Compliance Code：unknown
ECCN代码：3A001.A.1.AHTS代码：8541.29.00.95
风险等级：5.7Is Samacsys：N
其他特性：RADIATION HARDENED雪崩能效等级（Eas）：150 mJ
外壳连接：ISOLATED配置：SINGLE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：8 A
最大漏极电流 (ID)：9.4 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-257AAJESD-30 代码：R-XSFM-P3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：37 A
认证状态：Not Qualified参考标准：MIL-19500/614C
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTXVH2N7381 数据手册

 浏览型号JANTXVH2N7381的Datasheet PDF文件第1页浏览型号JANTXVH2N7381的Datasheet PDF文件第3页浏览型号JANTXVH2N7381的Datasheet PDF文件第4页浏览型号JANTXVH2N7381的Datasheet PDF文件第5页浏览型号JANTXVH2N7381的Datasheet PDF文件第6页浏览型号JANTXVH2N7381的Datasheet PDF文件第7页 
MIL-PRF-19500/614B  
1.4 Primary electrical characteristics. Unless otherwise specified, TC = +25°C.  
IDSS max  
Max rDS(on)1 (1)  
GS = 12 V; ID = ID2  
TJ = +25°C  
Min V(BR)DSS  
VGS = 0 V  
ID = 1.0 mA dc  
VGS(th)1  
VGS = 0 V  
V
Type  
VDS = 80 percent  
of rated VDS  
VDS ≥ VGS  
ID = 1.0 mA dc  
V dc  
V dc  
µA dc  
Ω
Min  
2.0  
2.0  
Max  
4.0  
4.0  
2N7380  
2N7381  
100  
200  
25  
25  
0.18  
0.40  
(1) Pulsed (see 4.5.1).  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this  
specification, whether or not they are listed.  
2.2 Government documents.  
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a  
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are  
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and  
supplement thereto, cited in the solicitation (see 6.2).  
SPECIFICATION  
\
DEPARTMENT OF DEFENSE  
MIL-PRF-19500  
STANDARD  
DEPARTMENT OF DEFENSE  
MIL-STD-750  
-
Semiconductor Devices, General Specification for.  
-
Test Methods for Semiconductor Devices.  
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the  
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,  
Philadelphia, PA 19111-5094.)  
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited  
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws  
and regulations unless a specific exemption has been obtained.  
3. REQUIREMENTS  
*
3.1 General. The requirements for acquiring the product described herein shall consist of this document and  
MIL-PRF-19500.  
2
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