Datasheet > JANTXVH2N7381

JANTXVH2N7381

更新时间： 2024-02-03 11:08:02

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
18页	92K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-257AA

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JANTXVH2N7381 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-257AA	包装说明：	FLANGE MOUNT, R-XSFM-P3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.1.A	HTS代码：	8541.29.00.95
风险等级：	5.7	Is Samacsys：	N
其他特性：	RADIATION HARDENED	雪崩能效等级（Eas）：	150 mJ
外壳连接：	ISOLATED	配置：	SINGLE
最小漏源击穿电压：	200 V	最大漏极电流 (Abs) (ID)：	8 A
最大漏极电流 (ID)：	9.4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-257AA	JESD-30 代码：	R-XSFM-P3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2 W	最大脉冲漏极电流 (IDM)：	37 A
认证状态：	Not Qualified	参考标准：	MIL-19500/614C
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	PIN/PEG
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

JANTXVH2N7381 数据手册

MIL-PRF-19500/614B

* 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method

3161 of MIL-STD-750. The maximum limit of R_θ_JC(max)shall be 1.67°C/W. The following parameter measurements

shall apply:

a. Measuring current (I_M): ............................ 10 mA.

b. Drain heating current (I_H):........................ 2 A minimum.

c. Heating time (t_H): ..................................... Steady-state (see method 3161 of MIL-STD-750 for definition).

d. Drain-source heating voltage (V_H): .......... 15 V minimum.

e. Measurement time delay (t_MD): ................ 30 µs to 60µs maximum.

f. Sample window time (t_SW): ...................... 10 µs maximum.

* 4.5.3 Thermal impedance ( Z_θ_JCmeasurements). The Z_θ_JCmeasurements shall be performed in accordance with

MIL-STD-750, method 3161. The maximum limit (not to exceed figure 2, thermal impedance curves and the group

A, subgroup 2 limits) for Z_θ_JCin screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of

statistical process control. When the process has exhibited control and capability, the capability data shall be used

to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all

future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot

exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation

and disposition. This procedure may be used in lieu of an in line process monitor.

a. Measuring current (I_M):.....................................10 mA.

b. Drain heating current (I_H):.................................2 A minimum.

c. Heating time (t_H):..............................................50 ms.

d. Drain-source heating voltage (V_H):...................15 V minimum.

e. Measurement time delay (t_MD):.........................30 µs to 60 µs maximum.

f. Sample window time (t_SW):...............................10 µs maximum.

4.5.4 Gate stress test.

V_GS= ±24 V minimum.

b. t = 250 µs minimum.

* 4.5.5 Single pulse avalanche energy (E_AS).

a. Peak current (I_AS): I_D1.

b. Peak gate voltage (V_GS): 12 V.

c. Gate to source resistor (R_GS): 25 ≤ R_GS≤ 200 Ω.

d. Initial case temperature: +25°C +10°C, -5°C.

e. Inductance: (2 E_AS/(I_D1)²)((V_BR- V_DD)/V_BR) mH minimum.

f. Number of pulses to be applied: 1 pulse minimum.

g. Supply voltage V_DD= 50 V, or 25 V for 100 V devices.

1...4 5 678 9 10...18

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