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JANTXV2N6790U

更新时间： 2024-09-25 20:31:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
29页 401K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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JANTXV2N6790U 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.83Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：3.5 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：20 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

JANTXV2N6790U 数据手册

 浏览型号JANTXV2N6790U的Datasheet PDF文件第2页浏览型号JANTXV2N6790U的Datasheet PDF文件第3页浏览型号JANTXV2N6790U的Datasheet PDF文件第4页浏览型号JANTXV2N6790U的Datasheet PDF文件第5页浏览型号JANTXV2N6790U的Datasheet PDF文件第6页浏览型号JANTXV2N6790U的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 June 2013.  
INCH-POUND  
MIL-PRF-19500/555L  
17 April 2013  
SUPERSEDING  
MIL-PRF-19500/555K  
11 February 2010  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,  
TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, AND 2N6794U,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,  
MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in  
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figures 1 (TO-205AF), 2 (LCC), and figures 3, 4, 5, 6, and 7 for JANHC and JANKC  
(die) dimensions.  
1.3 Maximum ratings. (Unless otherwise specified, TA = +25°C).  
PT  
VDS  
VDG  
VGS  
VDS and VDG  
70,000 ft. altitude  
Type  
TA = +25°C  
W
V dc  
V dc  
V dc  
2N6788, 2N6788U  
2N6790, 2N6790U  
2N6792, 2N6792U  
2N6794, 2N6794U  
0.8  
0.8  
0.8  
0.8  
100  
200  
400  
500  
100  
200  
400  
500  
±20  
±20  
±20  
±20  
300  
300  
PT (1)  
TC = +25°C  
ID1 (3) (4)  
TC = +25°C  
ID2  
IS  
IDM  
(5)  
Rθ (2)  
JC  
Type  
TJ and TSTG  
TC = +100°C  
°C/W  
W
A dc  
A dc  
A dc  
A (pk)  
°C  
2N6788  
2N6790  
2N6792  
20  
20  
20  
20  
14  
14  
14  
14  
6.0  
3.5  
2.0  
1.5  
4.5  
2.8  
1.8  
1.4  
3.5  
2.25  
1.25  
1.0  
2.8  
1.8  
6.0  
3.5  
2.0  
1.5  
4.5  
2.8  
1.8  
1.4  
24  
14  
8
6.25  
6.25  
6.25  
6.25  
8.93  
8.93  
8.93  
8.93  
-55°  
to  
+150°  
2N6794  
6
2N6788U  
2N6790U  
2N6792U  
2N6794U  
18  
11  
7.2  
5.6  
1.13  
0.88  
See notes on next page.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.dla.mil/.  
AMSC N/A  
FSC 5961  
1234567...29

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与JANTXV2N6790U相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N6792 INFINEON

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 		POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)
JANTXV2N6792 RENESAS

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 		2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
JANTXV2N6792U INFINEON

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 		Power Field-Effect Transistor, 1.8A I(D), 400V, 2.07ohm, 1-Element, N-Channel, Silicon, Me
JANTXV2N6794 INFINEON

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 		POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)
JANTXV2N6794U INFINEON

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 		REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
JANTXV2N6796 INFINEON

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 		POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)
JANTXV2N6796 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTXV2N6796E3 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTXV2N6796U INFINEON

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 		REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTXV2N6798 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

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