是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BFM | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.18 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Qualified | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6766 | INFINEON |
功能相似 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A 2N6766 with Hermetic Packagi | |
IRF252 | IXYS |
功能相似 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series | |
IRF251 | IXYS |
功能相似 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6768 | INFINEON |
获取价格 |
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A) | |
JANTXV2N6768T1 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
JANTXV2N6770 | INFINEON |
获取价格 |
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A) | |
JANTXV2N6770 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 | |
JANTXV2N6770T1 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
JANTXV2N6782 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A) | |
JANTXV2N6782U | INFINEON |
获取价格 |
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTXV2N6784 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A) | |
JANTXV2N6784U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R | |
JANTXV2N6786 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A) |