是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | 风险等级: | 5.08 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 1.25 A |
最大漏源导通电阻: | 3.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-39 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6786U | INFINEON |
获取价格 |
HEXFET TRANSISTOR | |
JANTXV2N6786U | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, | |
JANTXV2N6788 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) | |
JANTXV2N6788U | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
JANTXV2N6790 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A) | |
JANTXV2N6790U | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
JANTXV2N6792 | INFINEON |
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POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) | |
JANTXV2N6792 | RENESAS |
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2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
JANTXV2N6792U | INFINEON |
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Power Field-Effect Transistor, 1.8A I(D), 400V, 2.07ohm, 1-Element, N-Channel, Silicon, Me | |
JANTXV2N6794 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A) |