Datasheet > JANTXV2N3811U

JANTXV2N3811U

更新时间： 2024-10-01 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	91K
描述
TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78

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JANTXV2N3811U 数据手册

The documentation and process conversion measures necessary to

comply with this document shall be completed by 4 April, 2002.

INCH-POUND

MIL-PRF-19500/396H

4 January 2002

SUPERSEDING

MIL-PRF-19500/396G

21 April 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two

levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764

and 2N3765 (TO - 46) and figure 2 (die) herein.

1.3 Maximum ratings.

Types

P_T

V_CBO

V dc

V_CEO

V dc

V_EBO

V dc

I_C

T_OPand T_STG

θJC

T_A= +25°C

A dc

°C

°C/W

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

1.0 (1)

0.5 (2)

1.5

-65 to +200

(1) Derate linearly at 5.71 mW/°C above T_A= +25°C.

(2) Derate linearly at 2.86 mW/°C above T_A= +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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