Datasheet > JANTXV2N3847

JANTXV2N3847

更新时间： 2024-01-12 17:10:04

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
NPN POWER SILICON TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N3847 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 412

Devices

Qualified Level

JAN

2N3846

2N3847

JANTX

JANTXV

MAXIMUM RATINGS

2N3846 2N3847

Ratings

Symbol

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

200

300

400

V_CEO

V_CBO

V_EBO

I_C

Vdc

4.0

150

Adc

⁰C

Total Power Dissipation

@ T_A= +25⁰C ⁽¹⁾

@ T_C= +100⁰C ⁽²⁾

P_T

Operating & Storage Temperature Range

-65 to +200

T_op,

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

Unit

⁰C/W

TO-63*

0.5

qJC

1) Derate linearly 26.6 mW/⁰C to +175⁰C

2) Derate linearly 2 W/⁰C to +175⁰C

*See Appendix A for Package

Outline

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc; I_B= 0

Symbol

Min.

Max.

Unit

Vdc

2N3846

2N3847

V_(BR)

CEO

200

300

Collector-Emitter Cutoff Current

V_CE= 300 Vdc; V_BE= 0

V_CE= 400 Vdc; V_BE= 0

2N3846

2N3847

mAdc

I_CES

Collector-Emitter Cutoff Current

V_CE= 200 Vdc; I_B= 0

V_CE= 300 Vdc; I_B= 0

2N3846

2N3847

mAdc

I_CEO

Emitter-Base Cutoff Current

V_BE= 10 Vdc; I_C= 0

I_EBO

mAdc

250

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

下载PDF

与JANTXV2N3847相关器件

型号	品牌	描述	获取价格	数据表
JANTXV2N3866A	ETC	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| TO-39	获取价格
JANTXV2N3866AUB	ETC	BJT	获取价格
JANTXV2N3866UB	ETC	BJT	获取价格
JANTXV2N3867	MICROSEMI	Silicon PNP Power Transistors	获取价格
JANTXV2N3867S	MICROSEMI	Silicon PNP Power Transistors	获取价格
JANTXV2N3868	MICROSEMI	Silicon PNP Power Transistors	获取价格