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JANTXV2N3866UB PDF预览

JANTXV2N3866UB

更新时间： 2024-01-07 07:06:40
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
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22页 124K
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BJT

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JANTXV2N3866UB 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-CDSO-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.22最大集电极电流 (IC)：0.4 A
基于收集器的最大容量：3.5 pF集电极-发射极最大电压：30 V
配置：SINGLE最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-CDSO-N3元件数量：1
端子数量：3封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
参考标准：MIL-19500/398表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

JANTXV2N3866UB 数据手册

 浏览型号JANTXV2N3866UB的Datasheet PDF文件第2页浏览型号JANTXV2N3866UB的Datasheet PDF文件第3页浏览型号JANTXV2N3866UB的Datasheet PDF文件第4页浏览型号JANTXV2N3866UB的Datasheet PDF文件第5页浏览型号JANTXV2N3866UB的Datasheet PDF文件第6页浏览型号JANTXV2N3866UB的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 23 May 2002.  
INCH-POUND  
MIL-PRF-19500/398F  
23 January 2002  
SUPERSEDING  
MIL-PRF-19500/398E  
11 September 2000  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY  
TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier  
transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for die.  
* 1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (surface mount, UB), and figure 3 (die).  
* 1.3 Maximum ratings.  
Types  
PT  
TC = (3),  
PT (1)  
TA = (2)  
TJ and  
TSTG  
RθJC  
RθJA  
VCBO  
V dc  
VCEO  
V dc  
VEBO  
V dc  
IC  
W
W
A dc  
°C  
°C/W  
°C/W  
2N3866, 2N3866A  
2N3866UB, 2N3866AUB  
2.9  
1.0  
0.5  
60  
60  
30  
30  
3.5  
3.5  
0.4  
0.4  
-65 to +200  
-65 to +200  
60  
325  
(1) Derate linearly 5.71 mW/°C (2N3866, 2N3866A) and 2.86 mW/°C (2N3866UB, 2N3866AUB) above  
TA ≥ +25°C.  
(2) TA = Room ambient as defined in the general requirements of MIL-PRF-19500.  
(3) PT = 2.9 W at TC = +25°C, derate at 16.6 mW/°C above TC > +25°C.  
* 1.4 Primary electrical characteristics.  
h
V
C
P
P
out2  
h
FE (1)  
CE(SAT)  
obo  
out1  
fe  
V
= 5.0 V dc  
V
= 15 V dc  
I
= 100 mA dc  
= 10 mA dc  
V
= 28 V dc  
V
= 28 V dc V  
= 28 V dc  
CE  
CE  
= 50 mA dc  
C
CB  
CC  
CC  
= 0.15 W Pin = 0.075 W  
I
= 50 mA dc  
I
I
I
= 0  
P
C
C
B
E
in  
f = 200 MHz  
f = 400 MHz  
f = 400 MHz  
100 kHz ≤ f ≤ 1 MHz  
2N3866  
2N3866A  
2N3866  
2N3866A  
V dc  
1.0  
pF  
W
W
2N3866UB 2N3866AUB 2N3866UB 2N3866AUB  
Min  
Max  
15  
200  
25  
200  
2.5  
8.0  
4.0  
7.5  
1.0  
2.0  
0.5  
3.5  
(1) Pulsed (see 4.5.1)  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box  
3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)  
appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...22

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