Datasheet > JANTXV2N3847

JANTXV2N3847

更新时间： 2024-01-16 12:51:50

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
NPN POWER SILICON TRANSISTOR

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数据手册

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JANTXV2N3847 数据手册

2N3846, 2N3847 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS ⁽³⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 1 Adc; V_CE= 3.0 Vdc

I_C= 5 Adc; V_CE= 3.0 Vdc

I_C= 10 Adc; V_CE= 3.0 Vdc

Base-Emitter Voltage

V_CE= 3 Vdc; I_C= 10 Adc

Base-Emitter Saturated Voltage

I_B= 1.6 Adc; I_C= 10 Adc

Collector-Emitter Saturated Voltage

I_B= 1.6 Adc; I_C= 10 Adc

h_FE

240

Vdc

V_BE

1.20

1.30

0.75

V_BE(sat)

V_CE(sat)

DYNAMIC CHARACTERISTICS

Magnitude of Common-Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

½h_fe½

I_C= 1.0 Adc, V_CE= 10 Vdc, f = 1 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 5 Adc, V_CE= 10 Vdc, f = 1 kHz

Output Capacitance

V_CB= 10 Vdc, I_E= 0, 100 kHz £ f £ 1.0 MHz

h_fe

250

750

C_obo

SWITCHING CHARACTERISTICS

Turn-On Time

V_BE(off)~ -7.5 Vdc; I_C= 10 Adc;

I_B1= 2 Adc; I_B2= -2 Adc; R_L= 15W

Turn-Off Time

^ton

^toff

V_BE(off)~ -7.5 Vdc; I_C= 10 Adc;

I_B1= 2 Adc; I_B2= 2 Adc; R_L= 15W

SAFE OPERATING AREA

DC Tests

T_C= +100⁰C; V_CE= 0 Vdc, I_C= 0 Adc (See Figure 3 on Mil-PRF-19500/412)

Test 1

V_CE= 7.5 Vdc; I_C= 20 Adc; t_p= 1.0 s; 1 cycle

Test 2

V_CE= 200 Vdc; I_C= 100 mAdc; t_p= 1.0 s, 1 cycle

Test 3

V_CE= 58 Vdc; I_C= 1.0 Adc; t_p= 1.0 s, 1 cycle

Burnout by Pulsing (2N3847 only)

T_C= +100⁰C; V_CE= 300 Vdc; I_C= 20 mAdc; t_p= 1.0 s, 1 cycle

Unclamped Inductive Sweep

T_C= +100⁰C; I_C= 20 Adc; I_B= 2 Adc (See Figure 4 on Mil-PRF-19500/412)

Clamped Inductive Sweep

T_C= +100⁰C; I_C= 20 Adc; I_B= 2 Adc (See Figure 5 on Mil-PRF-19500/412)

3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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