是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-72 |
包装说明: | CYLINDRICAL, O-MBCY-W4 | 针数: | 4 |
Reach Compliance Code: | unknown | 风险等级: | 5.1 |
配置: | SINGLE | FET 技术: | JUNCTION |
JEDEC-95代码: | TO-72 | JESD-30 代码: | O-MBCY-W4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Qualified |
参考标准: | MIL | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N3822 | MICROSEMI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
JANTXV2N3822 | SOLITRON |
获取价格 |
N-CHANNEL JFETS - 1 | |
JANTXV2N3823 | SOLITRON |
获取价格 |
N-CHANNEL JFETS - 1 | |
JANTXV2N3838 | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-89 | |
JANTXV2N3846 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N3847 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N3866A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | TO-39 | |
JANTXV2N3866AUB | ETC |
获取价格 |
BJT | |
JANTXV2N3866UB | ETC |
获取价格 |
BJT | |
JANTXV2N3867 | MICROSEMI |
获取价格 |
Silicon PNP Power Transistors |