JANTXV1N5805

更新时间： 2024-11-04 23:10:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管功效超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	307K
描述
RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP

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JANTXV1N5805 数据手册

1N5802 thru 1N5806

VOIDLESS-HERMETICALLY-SEALED

ULTRAFAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-

19500/477 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak

reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. They are also

available in surface-mount packages (see separate data sheet for 1N5802US thru

1N5806US). Microsemi also offers numerous other rectifier products to meet higher

and lower current ratings with various recovery time speed requirements including

standard, fast and ultrafast in both through-hole and surface-mount packages.

“A” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Popular JEDEC registered 1N5802 to 1N5806 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V

• Military and other high-reliability applications

• Switching power supplies or other applications

requiring extremely fast switching & low forward loss

• High forward surge current capability

• Low thermal resistance

• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-

• Controlled avalanche with peak reverse power

19500/477

capability

• Surface mount equivalents also available in a square end-cap

MELF configuration with “US” suffix (see separate data sheet

for 1N5802US thru 1N5806US)

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

• Storage Temperature: -65^oC to +175^oC

• Average Rectified Forward Current (I_O): 2.5 A @ T_L= 75ºC

• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)

• Thermal Impedance: 4.5^oC/W @ 10 ms heating time

• Forward Surge Current: 35 Amps @ 8.3 ms half-sine

• Capacitance: 25 pF @ V_R= 10 Volts, f = 1 MHz

• Solder temperature: 260ºC for 10 s (maximum)

with Tungsten slugs

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

over Copper

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 340 mg

•

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

WORKING BREAKDOWN

AVERAGE

RECTIFIED RECTIFIED

CURRENT CURRENT

AVERAGE

MAXIMUM

FORWARD

VOLTAGE

@ 1 A

REVERSE

CURRENT

(MAX)

SURGE

CURRENT

(MAX)

REVERSE

RECOVERY

TIME (MAX)

(NOTE 4)

PEAK

VOLTAGE

(MIN.)

REVERSE

TYPE

VOLTAGE

@ 100µA

@ V

RWM

FSM

(8.3 ms pulse)

V_F

I_R

(NOTE 3)

T_L=+75ºC

(NOTE 1)

AMPS

T_A=+55ºC

(Note 2)

AMPS

RWM

VOLTS

AMPS

µA

25^oC

100^oC 25^oC 100^oC

1N5802

1N5803

1N5804

1N5805

1N5806

2.5

1.0

0.875

0.800

100

125

150

110

135

160

0.875

NOTE 1: I_O1is rated at 2.5 A @ T_L= 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for T_Labove 75ºC.

NOTE 2: I_O2is rated at 1.0 A @ T_A= 55ºC for PC boards where thermal resistance from mounting point to

ambient is sufficiently controlled where T_J(max)does not exceed 175ºC. Derate at 8.33 mA/ºC for T_Aabove 55ºC.

NOTE 3: T_A= 25^oC @ I_O= 1.0 A and V_RWMfor ten 8.3 ms surges at 1 minute intervals

NOTE 4: I = 0.5 A, I

= 0.5 A, I

= .05 A

R(REC)

7-16-2004 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

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与JANTXV1N5805相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N5805US	MICROSEMI	获取价格	RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP
JANTXV1N5806	MICROSEMI	获取价格	RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP
JANTXV1N5806	SENSITRON	获取价格	DESCRIPTION: 150 VOLT, AMP, 25 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTXV1N5806R	MICROSEMI	获取价格	暂无描述
JANTXV1N5806URS	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
JANTXV1N5806US	MICROSEMI	获取价格	RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP
JANTXV1N5806US	SENSITRON	获取价格	DESCRIPTION: 150 VOLT, AMP, 25 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTXV1N5807	MICROSEMI	获取价格	ULTRA FAST RECTIFIERS
JANTXV1N5807	SENSITRON	获取价格	DESCRIPTION: 50 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A 304 PACKAGE.
JANTXV1N5807CB	MICROSEMI	获取价格	暂无描述

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