是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | HERMETIC SEALED, GLASS PACKAGE-2 |
针数: | 2 | Reach Compliance Code: | compliant |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.48 |
其他特性: | HIGH RELIABILITY, METALLURGICALLY BONDED | 应用: | ULTRA FAST RECOVERY |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 125 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 3 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 100 V |
最大反向恢复时间: | 0.03 µs | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANS1N5809 | SENSITRON |
功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV1N5809CB | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN | |
JANTXV1N5809R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, | |
JANTXV1N5809URS | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MEL | |
JANTXV1N5809US | SEMTECH |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | |
JANTXV1N5809US | SENSITRON |
获取价格 |
DESCRIPTION: 100 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-B PACKAGE. | |
JANTXV1N5810 | MICROSEMI |
获取价格 |
ULTRA FAST RECTIFIERS | |
JANTXV1N5810US | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, | |
JANTXV1N5811 | MICROSEMI |
获取价格 |
ULTRA FAST RECTIFIERS | |
JANTXV1N5811 | SENSITRON |
获取价格 |
DESCRIPTION: 150 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A 304 PACKAGE. | |
JANTXV1N5811CBUS | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5 |