型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N7330H | RENESAS |
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Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
JANTX2N7330R | RENESAS |
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26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE, TO-204AE, 2 PIN | |
JANTX2N7331R | RENESAS |
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19A, 200V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA, HERMETIC SEALED, METAL PACKAGE | |
JANTX2N7334 | MICROSEMI |
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Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal | |
JANTX2N7334 | INFINEON |
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100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging | |
JANTX2N7334PBF | INFINEON |
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Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal | |
JANTX2N7335 | INFINEON |
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POWER MOSFET THRU-HOLE (MO-036AB) | |
JANTX2N7335 | MICROSEMI |
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Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, M | |
JANTX2N7336 | INFINEON |
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POWER MOSFET THRU-HOLE (MO-036AB) | |
JANTX2N7368 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 |