Datasheet > JANTX2N7334

JANTX2N7334

更新时间： 2023-12-06 20:12:25

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	267K
描述
100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging

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JANTX2N7334 数据手册

PD-90396H

IRFG110

JANTX2N7334

JANTXV2N7334

POWER MOSFET

THRU-HOLE (MO-036AB)

REF:MIL-PRF-19500/597

100V, QUAD N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFG110

0.7 Ω

1.0A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package eliminates

the need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

1.0

0.6

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

4.0

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

1.0

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

0.14

5.5

V/ns

dv/dt

-55 to 150

°C

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.63 in./1.6 mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

03/01/10

12 3 4 5 6 7

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