生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 19 A | 最大漏源导通电阻: | 0.21 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-258AA |
JESD-30 代码: | R-MSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 57 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N7334 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal | |
JANTX2N7334 | INFINEON |
获取价格 |
100V Quad N-Channel MOSFET in a MO-036AB package - A JANTX2N7334 with Hermetic Packaging | |
JANTX2N7334PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal | |
JANTX2N7335 | INFINEON |
获取价格 |
POWER MOSFET THRU-HOLE (MO-036AB) | |
JANTX2N7335 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, M | |
JANTX2N7336 | INFINEON |
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POWER MOSFET THRU-HOLE (MO-036AB) | |
JANTX2N7368 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JANTX2N7369 | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-254 | |
JANTX2N7370 | MICROSEMI |
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NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | |
JANTX2N7371 | MICROSEMI |
获取价格 |
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR |