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JANTX2N5796AU

更新时间: 2024-09-30 13:08:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关
页数 文件大小 规格书
3页 130K
描述
Transistor

JANTX2N5796AU 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.6 A最小直流电流增益 (hFE):100
最高工作温度:175 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

JANTX2N5796AU 数据手册

 浏览型号JANTX2N5796AU的Datasheet PDF文件第2页浏览型号JANTX2N5796AU的Datasheet PDF文件第3页 
TECHNICAL DATA  
PNP DUAL SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/496  
Devices  
Qualified Level  
JAN  
2N5796  
2N5795  
JANTX  
JANTXV  
2N5796U  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
5.0  
Vdc  
TO-78*  
mAdc  
600  
Both(2)  
One(1)  
Section  
0.5  
Sections  
Total Power Dissipation  
@ TA = +250C  
0.6  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +175  
TJ, T  
stg  
1) Derate linearly 2.86 mW/0C for TA +250C  
2) Derate linearly 3.43 mW/0C for TA +250C  
6 PIN SURFACE  
MOUNT*  
*See  
MILPRF19500/496 for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
60  
Vdc  
V(BR)CEO  
ICBO  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
ηAdc  
µAdc  
10  
10  
VCBO = 60 Vdc  
Emitter-Base Cutoff Current  
VEB = 3.0 Vdc  
IEBO  
ηAdc  
µAdc  
100  
10  
VEB = 5.0 Vdc  
6 Lake Street, Lawrence, MA 01841  
42203  
Page 1 of 2  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

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Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, T