Datasheet > JANSR2N7587U3

JANSR2N7587U3

更新时间： 2023-12-06 19:52:28

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1067K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7587U3 数据手册

IRHNJ67130

JANSR2N7587U3

Pre-Irradiation

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

Upto300kRads(Si)¹

Symbol

Parameter

Units

Test Conditions

Min.

100

2.0

Max.

–––

4.0

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

–––

100

-100

µA

I_GSS

V_GS= -20V

I_DSS

V_DS= 80V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

0.045

V_GS= 12V, I_D2= 19A



Static Drain-to-Source 

On-State Resistance (SMD-0.5)

R_DS(on)

V_SD

–––

0.042

1.2

V_GS= 12V, I_D2= 19A

V_GS= 0V, I_S= 22A



Diode Forward Voltage 

1. Part numbers IRHNJ67130 (JANSR2N7587U3) and IRHNJ63130 (JANSF2N7587U3)

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =

(MeV/(mg/cm²))

-5V

-10V

-15V

-19V

-20V

39 ± 5%

61 ± 5%

90 ± 5%

315 ± 5%

345 ± 5%

375 ± 7.5%

40 ± 5%

32 ± 7.5%

29 ± 7.5%

100

–––

100

–––

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

2019-12-10

International Rectifier HiRel Products, Inc.

1 234 5 6 7...9

下载PDF

与JANSR2N7587U3相关器件

型号	品牌	描述	获取价格	数据表
JANSR2N7588T3	INFINEON	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257	获取价格
JANSR2N7589U3	INFINEON	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad	获取价格
JANSR2N7591U3	INFINEON	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad	获取价格
JANSR2N7591U3C	INFINEON	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad	获取价格
JANSR2N7592T3	INFINEON	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257	获取价格
JANSR2N7593U3	INFINEON	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr	获取价格