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JANSF2N2907AUBC PDF预览

JANSF2N2907AUBC

更新时间: 2024-10-02 19:54:47
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
35页 798K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4

JANSF2N2907AUBC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-CDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.88最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-CDSO-N3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Qualified参考标准:MIL-19500
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):300 ns
最大开启时间(吨):45 nsBase Number Matches:1

JANSF2N2907AUBC 数据手册

 浏览型号JANSF2N2907AUBC的Datasheet PDF文件第2页浏览型号JANSF2N2907AUBC的Datasheet PDF文件第3页浏览型号JANSF2N2907AUBC的Datasheet PDF文件第4页浏览型号JANSF2N2907AUBC的Datasheet PDF文件第5页浏览型号JANSF2N2907AUBC的Datasheet PDF文件第6页浏览型号JANSF2N2907AUBC的Datasheet PDF文件第7页 
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 16 May 2013.  
INCH-POUND  
MIL-PRF-19500/291U  
16 February 2013  
SUPERSEDING  
MIL-PRF-19500/291T  
23 September 2011  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,  
TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA,  
2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC,  
2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN,  
JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,  
JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD,  
JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five  
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two  
levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA)  
level designators “M”, “D”, “P“, “L” “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices which  
have passed RHA requirements.  
*
1.2 Physical dimensions. See figure 1 (similar to a TO-18), figure 2, (surface mount case outlines UA, figure 3  
UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin,  
isolated metal lid), and UBCN (3-pin, isolated ceramic lid) and figures 4, and 5 (JANHC and JANKC).  
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.  
Types  
I
V
V
V
T and T  
J
C
CBO  
EBO  
CEO  
STG  
mA dc  
600  
V dc  
60  
V dc  
5
V dc  
60  
°C  
All devices  
-65 to +200  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST Online  
database at https://assist.dla.mil .  
AMSC N/A  
FSC 5961  
 

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