Datasheet > JANSF2N5151

JANSF2N5151

更新时间： 2024-11-30 09:56:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	173K
描述
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

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替代型号

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JANSF2N5151 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

PNP POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/545

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

JANSF – 300K Rads (Si)

2N5151

2N5151L

2N5151U3

2N5153

2N5153L

2N5153U3

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

100

5.5

2.0

Vdc

Adc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

2N5151, 2N5153, L

2N5151U3, 2N5153U3

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

@ T_A= +25°C ⁽³⁾

@ T_C= +25°C ⁽⁴⁾

1.0

1.16

100

TO-5

2N5151L, 2N5153L

(See Figure 1)

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

R_θJC

-65 to +200

°C

1.75 (U3)

Thermal Resistance, Junction-to Case

°C/W

Note:

1) Derate linearly 5.7mW/°C for T_A> +25°

2) Derate linearly 66.7mW/°C for T_A> +25°

3) Derate linearly 6.63mW/°C for T_A> +25°

4) Derate linearly 571mW/°C for T_A> +25°

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

TO-39 (TO-205AD)

2N5151, 2N5153

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 100mAdc, I_B= 0

V_(BR)CEO

Vdc

Emitter-Base Cutoff Current

_EB= 4.0Vdc, I_C= 0

I_EBO

1.0

µAdc

mAdc

V_EB= 5.5Vdc, I_C= 0

Collector-Emitter Cutoff Current

_CE= 60Vdc, V_BE= 0

I_CES

1.0

µAdc

mAdc

V_CE= 100Vdc, V_BE= 0

U-3

Collector-Base Cutoff Current

V_CE= 40Vdc, I_B= 0

I_CEO

µAdc

2N5151U3, 2N5153U3

T4-LDS-0131 Rev. 1 (091476)

Page 1 of 4

12 3 4

中文翻译

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JANSF2N5151 替代型号

型号	品牌	替代类型	描述	数据表
2N5151LEADFREE	CENTRAL	功能相似	Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO
2N5151	MICROSEMI	功能相似	Silicon PNP Transistor
2N5151	CENTRAL	功能相似	Small Signal Transistors

与JANSF2N5151相关器件

型号	品牌	获取价格	描述	数据表
JANSF2N5151L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-
JANSF2N5152	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5152L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5153	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD,
JANSF2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5154L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JANSF2N7261	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Met
JANSF2N7261	MICROSEMI	获取价格	Power Field-Effect Transistor, 8A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Meta
JANSF2N72610U	INFINEON	获取价格	8A, 100V, 0.185ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC-18

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