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JANS1N5819UR-1 PDF预览

JANS1N5819UR-1

更新时间: 2024-09-16 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 38K
描述
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

JANS1N5819UR-1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DO-213AB
包装说明:O-XELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
Is Samacsys:N其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-213ABJESD-30 代码:O-XELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500/586F最大重复峰值反向电压:45 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANS1N5819UR-1 数据手册

 浏览型号JANS1N5819UR-1的Datasheet PDF文件第2页 
• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV  
AND JANS PER MIL-PRF-19500/586  
1N5819UR  
and  
CDLL5817 thru CDLL5819  
and  
CDLL6759 thru CDLL6761  
and  
• 1 AMP SCHOTTKY BARRIER RECTIFIERS  
• HERMETICALLY SEALED  
• LEADLESS PACKAGE FOR SURFACE MOUNT  
• METALLURGICALLY BONDED  
CDLL1A20 thru CDLL1A100  
MAXIMUM RATINGS  
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Average Rectified Forward Current: 1.0 AMP @T  
= +55°C  
EC  
Derating: 14 mA / °C above T  
EC  
= +55°C  
MILLIMETERS  
INCHES  
DIM MIN MAX MIN MAX  
D
F
2.39  
0.41  
4.80  
2.66 .094 .105  
0.55 .016 .022  
5.20 .189 .205  
G
G1  
S
4.11 REF.  
0.03 MIN.  
.159 REF.  
.001 MIN.  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
CDI  
TYPE  
NUMBER  
WORKING PEAK  
REVERSE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
AT RATED VOLTAGE  
FIGURE 1  
MAXIMUM FORWARD VOLTAGE  
VOLTAGE  
V
V
@ 0.1A  
V
@ 1.0A  
VOLTS  
V
@ 3.1A  
I
@ +25°C  
I
R
@ +100°C  
RWM  
F
F
F
R
DESIGN DATA  
VOLTS  
VOLTS  
VOLTS  
mA  
mA  
CDLL5817  
CDLL5818  
CDLL5819  
J,JX,JV & JS  
5819UR-1  
20  
30  
40  
45  
0.36  
0.36  
0.36  
0.34  
0.60  
0.60  
0.60  
0.49  
0.9  
0.9  
0.9  
0.8  
0.1  
0.1  
5.0  
5.0  
5.0  
5.0  
CASE: DO-213AB, Hermetically sealed  
glass case. (MELF, LL41)  
0.1  
0.05  
LEAD FINISH: Tin / Lead  
CDLL6759  
CDLL6760  
CDLL6761  
J,JX,JV & JS  
6761UR-1  
60  
80  
0.38  
0.38  
0.38  
0.38  
0.69  
0.69  
0.69  
0.69  
N/A  
N/A  
N/A  
N/A  
0.1  
0.1  
6.0  
6.0  
THERMAL RESISTANCE: (R  
):  
OJEC  
40 ÞC/W maximum at L = 0 inch  
100  
100  
0.1  
6.0  
THERMAL IMPEDANCE: (Z  
): 12  
OJX  
0.10  
12.0  
ÞC/W maximum  
CDLL1A20  
CDLL1A30  
CDLL1A40  
CDLL1A50  
CDLL1A60  
CDLL1A80  
CDLL1A100  
20  
30  
0.36  
0.36  
0.36  
0.36  
0.38  
0.38  
0.38  
0.60  
0.60  
0.60  
0.60  
0.69  
0.69  
0.69  
0.9  
0.9  
0.9  
0.9  
N/A  
N/A  
N/A  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
5.0  
5.0  
POLARITY: Cathode end is banded.  
40  
5.0  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
50  
5.0  
60  
12.0  
12.0  
12.0  
80  
100  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
WEBSITE: http://www.microsemi.com  
FAX (978) 689-0803  
147  

JANS1N5819UR-1 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N5819UR-1 MICROSEMI

类似代替

Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2
JANTX1N5819UR-1 MICROSEMI

类似代替

Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

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