5秒后页面跳转
捷配首页

Datasheet > JANS1N6076
JANS1N6076 PDF预览

JANS1N6076

更新时间： 2023-04-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数 文件大小 规格书
3页 352K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

阅读下载

中文翻译

获取价格

JANS1N6076 数据手册

 浏览型号JANS1N6076的Datasheet PDF文件第2页浏览型号JANS1N6076的Datasheet PDF文件第3页 
1N6073 thru 1N6081  
VOIDLESS HERMETICALLY SEALED  
ULTRA FAST RECOVERY GLASS  
POWER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/503 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in  
different package sizes for working peak reverse voltages from 50 to 150 volts are  
hermetically sealed with voidless-glass construction using an internal “Category I”  
metallurgical bond. These devices are also available in surface mount MELF  
package configurations by adding a “US” suffix (see separate data sheet for  
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speed  
requirements including standard, fast and ultrafast device types in both through-hole  
and surface mount packages.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6073 to 1N6081 series  
Voidless hermetically sealed glass package  
Extremely robust construction  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
•
Ultrafast recovery rectifier series 50 to 150 V  
•
•
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
•
•
High forward surge current capability  
Low thermal resistance  
JAN, JANTX, and JANTXV available for 1N6074 and  
1N6075 per MIL-PRF-19500/503  
•
Controlled avalanche with peak reverse power  
•
Further options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, JANTXV, or JANS by  
using a MQ, MX, MV or MSP prefix respectively , e.g.  
MX6076, MV6079, MSP6081, etc.  
capability  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Junction Temperature: -65oC to +155oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
•
•
Storage Temperature: -65oC to +155oC  
Peak Forward Surge Current @ 25oC: 35 Amps for  
1N6073-6075, 75 Amps for 1N6076-6078, and 175  
Amps for 1N6079-6081 at 8.3 ms half-sine wave  
TERMINATIONS: Axial-leads are Copper with  
Tin/Lead (Sn/Pb) finish  
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 1N6073 thru 1N6075: 340 mg  
1N6076 thru 1N6078: 750 mg  
1N6079 thru 1N6081: 1270 mg  
See package dimensions on last page  
•
Average Rectified Forward Current (IO) at TL= +70oC  
(L= 0 inch from body):  
1N6073 thru 1N6075: 3.0 Amps  
1N6076 thru 1N6078: 6.0 Amps  
1N6079 thru 1N6081: 12.0 Amps  
Average Rectified Forward Current (IO) at TA=55oC:  
1N6073 thru 1N6075: 0.85 Amps  
1N6076 thru 1N6078: 1.3 Amps  
1N6079 thru 1N6081: 2.0 Amps  
•
•
•
Thermal Resistance L= 0 inch (RθJL): 13oC/W for  
1N6073-6075, 8.5oC/W for 1N6076-6078, and  
5.0oC/W for 1N6079-6081  
Solder temperature: 260oC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-08-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与JANS1N6076相关器件

型号 品牌 获取价格 描述 数据表
JANS1N6077 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 6A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6078 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, E,
JANS1N6079 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6080 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6081 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANS1N6102AUS SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon, MICRO
JANS1N6103 MICROSEMI

获取价格

 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANS1N6103 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 5.7V V(RWM), Bidirectional, 2 Element, Silicon, HERM
JANS1N6103A MICROSEMI

获取价格

 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANS1N6103AUS MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 5.7V V(RWM), Bidirectional, 1 Element, Silicon, HERM

与JANS1N6076相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证