生命周期: | Active | 包装说明: | O-LELF-R2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.84 |
最小击穿电压: | 8.65 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-LELF-R2 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | BIDIRECTIONAL | 认证状态: | Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 6.9 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子形式: | WRAP AROUND | 端子位置: | END |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS1N6105US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.9V V(RWM), Bidirectional, 1 Element, Silicon, | |
JANS1N6106 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6106 | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 2 Element, Silicon, HERM | |
JANS1N6106A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6106A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Bidirectional, 2 Element, Silicon, HERM | |
JANS1N6106A | SENSITRON |
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500 W Transient Voltage Suppressor | |
JANS1N6106AUS | SENSITRON |
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500 W Transient Voltage Suppressor SM | |
JANS1N6106US | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 7.6V V(RWM), Unidirectional, 1 Element, Silicon, HER | |
JANS1N6107 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6107 | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 8.4V V(RWM), Bidirectional, 2 Element, Silicon, HERM |