生命周期: | Active | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.34 | 其他特性: | HIGH RELIABILITY |
最小击穿电压: | 7.79 V | 击穿电压标称值: | 8.2 V |
外壳连接: | ISOLATED | 最大钳位电压: | 12.5 V |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e2 | 最大非重复峰值反向功率耗散: | 500 W |
元件数量: | 2 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.5 W | 认证状态: | Qualified |
参考标准: | MIL-19500/516 | 最大重复峰值反向电压: | 6.2 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN COPPER |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS1N6104A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6104A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.2V V(RWM), Bidirectional, 2 Element, Silicon, HERM | |
JANS1N6104AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.2V V(RWM), Unidirectional, 1 Element, Silicon, HER | |
JANS1N6104US | MICROSEMI |
获取价格 |
暂无描述 | |
JANS1N6105 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6105 | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.9V V(RWM), Bidirectional, 2 Element, Silicon, HERM | |
JANS1N6105A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JANS1N6105A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.9V V(RWM), Bidirectional, 2 Element, Silicon, HERM | |
JANS1N6105A | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor | |
JANS1N6105AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 6.9V V(RWM), Unidirectional, 1 Element, Silicon, HER |